All Alternatives

Alternatives to Diodes Incorporated DMN3730UFB-7

Diodes Incorporated DMN3730UFB-7 and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for Diodes Incorporated DMN3730UFB-7

DMN3730UFB-7 compared against its qualified second sources
DMN3730UFB-7Diodes IncorporatedRV2E014AJT2CLRohm SemiconductorDMN32D2LFB4-7Diodes Incorporated+1more
FFF CompatibilityThe Rohm package (DFN1006-3) shares the identical 1.0mm x 0.6mm footprint, pad layout, and pinout assignment (Pin 1: Gate, Pin 2: Source, Pin 3: Drain) as the original X1-DFN1006-3 package.The physical dimensions and surface-mount land patterns of Rohm's DFN1006-3 and Diodes Inc's X1-DFN1006-3 are identical.Meets the 30V drain-source breakdown voltage and exceeds the original continuous current and RDS(on) performance specifications.The footprint, land pattern, and pin definitions (Pin 1: Gate, Pin 2: Source, Pin 3: Drain) are identical to the target.Uses the same footprint dimensions but is housed in a lower-profile X2-DFN1006-3 package (0.40mm height vs 0.50mm height).The continuous drain current is significantly lower (300mA vs 900mA) and the on-resistance is much higher (1.2 Ω vs 460 mΩ), making it unsuitable for high-current load switching.
AI Summary

DMN3730UFB-7 by Diodes Incorporated: N-Channel 30 V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3.

This is an excellent high-performance replacement from Rohm. It offers a significantly lower on-resistance of 290 mΩ (vs 460 mΩ) and a higher continuous current rating of 1.4A, resulting in lower power dissipation and improved efficiency in load-switch applications.

  • Lower on-resistance: 290 mΩ max vs 460 mΩ max at VGS = 4.5V, reducing conduction losses
  • Higher continuous drain current: 1.4A vs 0.9A, providing improved current handling capability
  • Higher gate-source voltage limit: ±12V vs ±8V, offering better transient protection margin
  • Slightly higher gate threshold voltage: 1.5V max vs 0.95V max, though still fully compatible with typical logic levels.

This is a lower-power, signal-level sibling within the Diodes Inc N-channel family. It is pin-compatible and physically identical, but should only be used as an alternative in low-current, high-speed switching or signal level-translation applications due to its lower current limit and higher on-resistance.

  • Identical manufacturer family and pinout for seamless sourcing
  • Slightly higher gate-source voltage range: ±10V vs ±8V
  • Very low gate charge and parasitic capacitances, allowing for faster switching speeds in signal-level circuits
  • Significantly lower continuous current: 300mA vs 900mA max
  • Significantly higher on-resistance: 1.2 Ω max vs 460 mΩ max at VGS = 4.5V
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