All Alternatives

Alternatives to Diodes Incorporated FZT795ATA

Diodes Incorporated FZT795ATA and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for Diodes Incorporated FZT795ATA

FZT795ATA compared against its qualified second sources
FZT795ATADiodes IncorporatedFZT796ATADiodes IncorporatedFZT758TADiodes Incorporated+3more
FFF CompatibilityIdentical SOT-223-3 package footprint and pin configuration (1-Base, 2-Collector, 3-Emitter, 4-Collector Tab).Identical package outline dimensions and SOT-223 surface-mount profile.Fully compatible electrical ratings, matching or exceeding all critical electrical parameters including 200V voltage rating, 500mA current, 2W power, and 100MHz frequency.Identical SOT-223-3 package footprint and pinout.Identical SOT-223 dimensions and surface-mount package.Has lower DC current gain (hFE min 40 vs 300) and lower transition frequency (50MHz vs 100MHz).
AI Summary

FZT795ATA by Diodes Incorporated: Bipolar (BJT) Transistor PNP 140 V 500 mA 100MHz 2 W Surface Mount SOT-223-3.

The FZT796ATA is a direct sibling from the same manufacturer series, offering an upgraded collector-emitter breakdown voltage of 200V while matching all other critical performance characteristics including current, high gain, and transition frequency. It serves as an ideal drop-in replacement with no circuit modifications required.

  • Pin-compatible drop-in replacement with identical SOT-223 footprint
  • Higher breakdown voltage rating: 200V vs 140V
  • Identical 500mA continuous collector current capacity

The FZT758TA is a 400V high-voltage PNP transistor sibling. It provides excellent voltage headroom but suffers from much lower current gain and transition frequency compared to the high-performance FZT795A.

  • Pin-compatible SOT-223 footprint
  • Significantly higher breakdown voltage rating: 400V vs 140V
  • Matches the 500mA continuous current rating and 2W power rating
  • Lower DC current gain: hFE min of 40 vs 300
  • Slower switching times with a transition frequency of 50MHz vs 100MHz
Lifecycle StatusActiveActiveActive
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