All Alternatives

Alternatives to Infineon Technologies IPB80P03P4L07ATMA2

Infineon Technologies IPB80P03P4L07ATMA2 and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for Infineon Technologies IPB80P03P4L07ATMA2

IPB80P03P4L07ATMA2 compared against its qualified second sources
IPB80P03P4L07ATMA2Infineon TechnologiesSQM120P04-04L_GE3Vishay SiliconixSQM40061EL_GE3Vishay Siliconix+1more
FFF CompatibilityIdentical TO-263-3 package size and pin-out mapping (Pin 1: Gate, Pin 2/Tab: Drain, Pin 3: Source).Matches the physical package size, shape, and SMD mounting requirements of the original D2PAK.Meets or exceeds all primary electrical specifications, including superior voltage headroom and improved conduction performance.Identical TO-263-3 package size and layout mapping (Gate on Pin 1, Drain on Pin 2/Tab, Source on Pin 3).Physically identical standard D2PAK package style and SMD dimensions.Directly covers logic-level operation and matches or improves upon all primary power handling limits.
AI Summary

IPB80P03P4L07ATMA2 by Infineon Technologies: P-Channel 30 V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2.

A highly reliable active automotive alternative providing lower RDS(on) and higher continuous current capability in an identical package footprint. It offers a -40V breakdown voltage rating which delivers improved safety margins compared to the -30V original.

  • Active product lifecycle with stable availability
  • Higher breakdown voltage rating (-40 V vs. -30 V)
  • Lower RDS(on) max at 10V (4.0 mOhm vs. 6.9 mOhm) minimizing thermal dissipation
  • Higher gate charge Qg (330 nC max vs. 80 nC max) which might marginally increase gate drive losses
  • Higher input capacitance Ciss (13980 pF max vs. 5700 pF max) which may slightly impact high-frequency switching transitions

An excellent balance of performance and compatibility, this active alternative offers improved RDS(on) and continuous current ratings with a very moderate increase in gate charge compared to other high-current options. It is fully automotive grade and provides a robust drop-in solution.

  • Active product lifecycle status
  • Slightly higher breakdown voltage (-40 V vs. -30 V) for better safety margins
  • Lower RDS(on) max at 10V (5.1 mOhm vs. 6.9 mOhm) reducing thermal loading
  • Higher gate charge Qg (280 nC max vs. 80 nC max) which may increase switching dissipation
  • Higher input capacitance Ciss (14500 pF max vs. 5700 pF max) requiring attention to transition speeds in high-frequency switching applications
Lifecycle StatusObsoleteActiveActive
Market AvailabilityIn stockIn stockIn stock
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