All Alternatives

Alternatives to Infineon Technologies SPD18P06P

Infineon Technologies SPD18P06P and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

SPD18P06P compared against its qualified second sources
SPD18P06PInfineon TechnologiesIPD650P06NMATMA1Infineon TechnologiesSTD35P6LLF6STMicroelectronics+3more
FFF CompatibilityStandard PG-TO252-3-313 footprint with identical pinout (Pin 1: Gate, Pin 3: Source, Tab: Drain).Identical TO-252 / DPAK package physical shape and mounting dimensions.Meets or exceeds all key electrical specs, offering a highly efficient upgrade to the obsolete original.Standard TO-252-3 package layout with Gate on Pin 1, Source on Pin 3, and Drain connected to Pin 2/Tab.Standard DPAK dimensional envelope is a perfect match.Substantially outperforms the original in conduction losses with a much lower RDS(on) and significantly higher current handling.
AI Summary

SPD18P06P by Infineon Technologies: P-Channel 60 V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3.

This is the recommended direct modern replacement from Infineon, offering significantly improved on-state resistance and higher current handling capabilities in an active, long-lived family. It is a true drop-in replacement with no layout changes required.

  • Direct replacement from the same manufacturer (Infineon)
  • Significantly improved RDS(on): 65 mΩ vs 130 mΩ max
  • Higher continuous drain current: 22 A vs 18.6 A
  • Slightly higher input capacitance (1600 pF vs 860 pF) and gate charge (39 nC vs 33 nC)

An excellent high-efficiency alternative from STMicroelectronics' active STripFET F6 series. It drastically reduces conduction losses thanks to its 28 mΩ RDS(on) and can handle much higher current, though total power dissipation is slightly lower.

  • Direct same-manufacturer alternative (Infineon)
  • Significantly lower RDS(on) of 28 mΩ vs 130 mΩ max
  • Much higher continuous current rating of 35 A vs 18.6 A
  • Lower maximum power dissipation (70 W vs 80 W)
  • Higher input capacitance (3780 pF vs 860 pF) due to larger silicon die area
Lifecycle StatusObsoleteUnknownActive
Market AvailabilityDiscontinuedUnknownIn stock
REACHREACHUnknownREACH
RoHSUnknownUnknownRoHS
DescriptionP-Channel 60 V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3This is the recommended direct modern replacement from Infineon, offering significantly improved on-state resistance and higher current handP-Channel 60 V 35A (Tc) 70W (Tc) Surface Mount DPAK
ManufacturerInfineon TechnologiesInfineon TechnologiesSTMicroelectronics
TypeTransistorsComponentTransistors
DatasheetOpenN/AOpen
Lead TimeUnknownUnknown16 weeks
Country of Origin---
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
FET TypeP-Channel--
Vgs (Max)±20V--
TechnologyMOSFET (Metal Oxide)--
Mounting TypeSurface Mount--
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63--
Vgs(th) (Max) @ Id4V @ 1mA--
Operating Temperature-55°C ~ 175°C (TJ)--
Rds On (Max) @ Id, Vgs130mOhm @ 13.2A, 10V--

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Frequently asked questions

Yes. The Infineon Technologies SPD18P06P is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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