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Alternatives to NXP USA Inc. MRF101BN

NXP USA Inc. MRF101BN and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

MRF101BN compared against its qualified second sources
MRF101BNNXP USA Inc.MRF101ANNXP USA Inc.MRF300BNNXP USA Inc.+1more
FFF CompatibilityHoused in the same TO-220-3 package, but the pinout is mirrored (Pin 1 and Pin 3 are swapped) compared to the MRF101BN. Pin 1 is Gate and Pin 3 is Drain.Identical physical package dimensions and mounting style (TO-220-3 through-hole).Identical electrical characteristics, gain (21.1 dB), and ruggedness performance as they belong to the same base family.Housed in a larger TO-247-3 package which is physically incompatible with the TO-220-3 footprint.Larger package body size and lead pitch (TO-247-3 vs TO-220-3).Frequency range starts at 27 MHz (27-250 MHz) compared to the MRF101BN's 1.8 MHz start, lacking low-frequency HF performance. Power rating is also significantly higher (300W).
AI Summary

MRF101BN by NXP USA Inc.: RF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 21.1dB 115W TO-220-3.

The MRF101AN is the exact mirror-pinout sibling of the MRF101BN. It offers identical electrical performance but requires swapping Pin 1 and Pin 3 connections on the PCB layout. Note that this part is also under Last Time Buy status.

  • Identical electrical performance and power rating (115W/100W CW)
  • Same TO-220-3 package footprint dimensions
  • Same 50V operating voltage and 1.8 to 250 MHz frequency range
  • Reversed Gate and Drain pins require PCB layout modifications or reverse mounting if physical clearance allows.
  • Also in Last Time Buy (LTB) lifecycle status.

The MRF300BN is a higher-power sibling that shares the same pinout orientation as the MRF101BN but comes in a larger TO-247 package. It is suitable for VHF applications but does not cover the lower HF range below 27 MHz, and is also in Last Time Buy status.

  • Same Drain-Source-Gate pinout configuration as MRF101BN (Pin 1: Drain, Pin 2: Source, Pin 3: Gate)
  • Higher power capability (300W vs 115W) allows for increased thermal headroom
  • Same 50V typical test voltage and technology (LDMOS)
  • Requires significant PCB space and mechanical mounting redesign due to the larger TO-247 package.
  • Narrower frequency range (27 MHz to 250 MHz) does not cover low HF bands (1.8 MHz to 27 MHz).
Lifecycle StatusLast time buyLast time buyActive
Market AvailabilityIn stockIn stockIn stock
REACHREACHREACHREACH
RoHSRoHSRoHSRoHS
DescriptionRF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 21.1dB 115W TO-220-3RF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 21.1dB 115W TO-220-3RF Mosfet 50 V 27MHz ~ 250MHz 18.7dB 300W TO-247
ManufacturerNXP USA Inc.NXP USA Inc.NXP USA Inc.
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time52 weeks52 weeks10 weeks
Country of OriginCN, US--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0065--
Moisture Sensitivity Level1 (Unlimited)--
Gain21.1dB--
Frequency1.8MHz ~ 250MHz--
TechnologyLDMOS--
Current - Test100 mA--
Package / CaseTO-220-3--
Power - Output115W--
Voltage - Test50 V--
Voltage - Rated133 V--

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Related parts

PartMarket availabilityLifecycleAlternatives available
MRF101ANNXP USA Inc.In stockLast time buy3Alternatives availableSee Alternatives
MRFG35010ANT1NXP USA Inc.DiscontinuedObsolete4Alternatives availableSee Alternatives

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Frequently asked questions

The NXP USA Inc. MRF101BN is in its last-time-buy phase — the manufacturer has announced end-of-life and is taking final orders only. If you need ongoing supply, the alternatives on this page are active replacements.

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