Alternatives to NXP BFG591

NXP BFG591 and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for NXP BFG591

BFG591 compared against its qualified second sources
	BFG591NXP	BFU590GXNXP USA Inc.
FFF Compatibility
AI Summary	BFG591 by NXP: Bipolar RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT 223.	A modern NPN RF transistor from NXP that serves as a high-performance alternative, offering an improved transition frequency of 8.5 GHz. The designer must verify that the circuit's maximum operating voltage does not exceed its lower 12 V collector-emitter breakdown limit. NXP's modern successor RF silicon transistor technology Higher transition frequency of 8.5 GHz (vs 7 GHz) for improved high-frequency gain Matches the original 200 mA maximum collector current and 2 W power dissipation limits Lower collector-emitter breakdown voltage (12 V vs 15 V) Slightly higher typical feedback capacitance (1.1 pF vs 0.7 pF)
Lifecycle Status	Active	Obsolete
Market Availability	Non-stock	Non-stock
REACH	Unknown	REACH
RoHS	RoHS	RoHS
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