What are the best alternatives to the NXP BFG591?

The closest qualified second sources for the NXP BFG591 are the BFG135 (NXP Semiconductors) and the BFG198 (NXP Semiconductors), out of 5 matched alternatives in total. Each is compared against the original on fit, form and function in the table above.

Are the BFG591 alternatives drop-in replacements?

Not always. The alternatives to the BFG591 are matched on function but can differ in package, pinout or a key parameter, so review the fit/form/function notes in the table and the datasheet before designing one in.

What type of part is the NXP BFG591?

The BFG591 (NXP) is a part in the NXP Semiconductors category. This page lists qualified, cross-referenced replacements for it with a side-by-side comparison.

All Alternatives

Alternatives to NXP BFG591

NXP BFG591 and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

BFG591 compared against its qualified second sources
	BFG591NXP	BFG135NXP Semiconductors	BFG198NXP Semiconductors
FFF Compatibility
AI Summary	BFG591 by NXP: Bipolar RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT 223.	The BFG135 is a close sibling in the same RF wideband transistor family. It shares the identical 7 GHz transition frequency and 15 V breakdown voltage, though it operates at slightly lower maximum power and current. Direct pin-to-pin drop-in replacement in the same SOT-223 package Same transition frequency of 7 GHz for high-frequency RF performance Identical collector-emitter breakdown voltage of 15 V Lower maximum DC collector current (150 mA vs. 200 mA) Lower total power dissipation limit (1 W vs. 2 W)	The BFG198 is a higher-frequency sibling in the same SOT-223 family. It offers an improved 8 GHz transition frequency and higher 20 V voltage rating, but is limited to half the collector current of the BFG591. Standard SOT-223 footprint with identical pin mapping Higher collector-emitter breakdown voltage (20 V vs. 15 V) Slightly higher transition frequency (8 GHz vs. 7 GHz) Reduced maximum collector current (100 mA vs. 200 mA) Reduced total power dissipation (1 W vs. 2 W)
Lifecycle Status	Active	Unknown	Unknown
Market Availability	Non-stock	Unknown	Unknown
REACH	Unknown	Unknown	Unknown
RoHS	RoHS	Unknown	Unknown
Description	Bipolar RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT 223	The BFG135 is a close sibling in the same RF wideband transistor family. It shares the identical 7 GHz transition frequency and 15 V breakdo	The BFG198 is a higher-frequency sibling in the same SOT-223 family. It offers an improved 8 GHz transition frequency and higher 20 V voltag
Manufacturer	NXP	NXP Semiconductors	NXP Semiconductors
Type	NXP Semiconductors	Component	Component
Datasheet	Open	N/A	N/A
Lead Time	52 weeks	Unknown	Unknown
Country of Origin	NL	-	-
Export Control Class Number	EAR99	EAR99	EAR99
HTSUS Code	85412900	-	-
Moisture Sensitivity Level	-	-	-
No. of Pins	3	-	-
Power Dissipation	2	-	-
Transistor Mounting	Surface Mount	-	-
Transistor Polarity	NPN	-	-
Transition Frequency	7	-	-
Transistor Case Style	SOT-223	-	-
DC Current Gain hFE Min	90	-	-
Operating Temperature Max	150	-	-

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