All Alternatives

Alternatives to onsemi 2N2907

onsemi 2N2907 and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

2N2907 compared against its qualified second sources
2N2907onsemi2N2907AMicrochip Technology2N2907A PBFREECentral Semiconductor Corp+3more
FFF CompatibilitySame circular TO-18 package with standard E-B-C terminal pinning (Emitter pin closest to case tab).Uses JEDEC TO-18 (TO-206AA) hermetic metal can package matching all physical dimensions of the original.Electrical specifications meet or exceed the original STMicroelectronics 2N2907, with VCEO improved from 40V to 60V.Identical TO-18 package with standard JEDEC emitter-base-collector configuration.Conforms to the identical TO-18 hermetic metal-can footprint.Meets all critical parameters including 600mA collector current and offers an upgraded 60V breakdown voltage.
AI Summary

2N2907 by onsemi: Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18.

An active, drop-in replacement that retains the rugged TO-18 metal can package while offering superior collector-emitter voltage headroom. This is the optimal second-source solution to replace the obsolete ST part.

  • True drop-in electrical and physical replacement
  • Higher Collector-Emitter Breakdown Voltage (60V vs 40V)
  • Active product lifecycle from a reliable tier-1 manufacturer

A high-reliability replacement from a specialist in discrete semiconductors. It is a true drop-in replacement that brings lead-free compliance and improved voltage ceiling to the existing design.

  • Drop-in physical and electrical replacement
  • Higher breakdown voltage rating of 60V
  • Lead-free (PBFREE) compliant construction
Lifecycle StatusObsoleteActiveActive
Market AvailabilityDiscontinuedIn stockIn stock
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DescriptionBipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18
ManufactureronsemiMicrochip TechnologyCentral Semiconductor Corp
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time7 weeks22 weeks12 weeks
Country of Origin---
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0065--
Moisture Sensitivity Level1 (Unlimited)--
Power - Max1.8 W--
Mounting TypeThrough Hole--
Package / CaseTO-206AA, TO-18-3 Metal Can--
Transistor TypePNP--
Operating Temperature200°C (TJ)--
Frequency - Transition200MHz--
Supplier Device PackageTO-18--
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA--

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Related parts

PartMarket availabilityLifecycleAlternatives available
2N2907ASTMicroelectronicsIn stockActive5Alternatives availableSee Alternatives
2N2219AonsemiNon-stockObsolete4Alternatives availableSee Alternatives

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Frequently asked questions

Yes. The onsemi 2N2907 is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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