All Alternatives

Alternatives to onsemi FDC633N

onsemi FDC633N and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

FDC633N compared against its qualified second sources
FDC633NonsemiSTT6N3LLH6STMicroelectronicsDMN3033LDM-7Diodes Incorporated+1more
FFF CompatibilityBoth parts share the identical SOT-23-6 pin layout with Pins 1, 2, 5, 6 as Drain, Pin 3 as Gate, and Pin 4 as Source.Both parts are packaged in standard SOT-23-6 (TSOP-6 / SuperSOT-6) surface-mount packages with compatible landing footprints.The electrical parameters meet or exceed the original FDC633N in every critical aspect, including breakdown voltage (30V), current, and drive capability.The pin configuration matches the original perfectly (Pins 1, 2, 5, 6 = Drain, Pin 3 = Gate, Pin 4 = Source).Packaged in standard SOT-26 / SOT-23-6 with identical physical package dimensions.Meets key voltage (30V) and power dissipation requirements while providing higher current handling.
AI Summary

FDC633N by onsemi: N-Channel 30 V 5.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6.

The STT6N3LLH6 is an exceptional, active drop-in replacement for the obsolete FDC633N. It features a matching 30V rating, a higher 6A current rating, and an improved on-resistance of 25 mOhm. Most importantly, its low 1.0V maximum gate threshold voltage matches the original, preserving support for low-voltage 2.5V gate drive designs.

  • Pin-compatible drop-in replacement with identical SOT-23-6 pinout
  • Higher continuous drain current rating (6A vs 5.2A)
  • Significantly lower Rds(on) (25 mOhm vs 42 mOhm) reduces conduction losses
  • Gate charge (Qg) is lower (3.6 nC vs 16 nC), which results in faster switching speeds but may require gate drive resistor adjustment in EMI-sensitive designs.

The DMN3033LDM-7 is a highly robust, active alternative with a higher current handling of 6.9A and a lower Rds(on) of 33 mOhm. It is fully pin-compatible and physically identical to the FDC633N, though it requires a slightly higher turn-on gate voltage.

  • Pin-compatible drop-in footprint with identical TSOT-23-6 / SOT-26 pin assignments
  • Higher continuous drain current capability (6.9A vs 5.2A)
  • Lower drain-source on-resistance (33 mOhm vs 42 mOhm)
  • Higher maximum gate threshold voltage (Vgs(th) max of 2.1V vs 1.0V) means it is not recommended for ultra-low 2.5V gate drive circuits and performs best at 4.5V or higher.
  • Maximum gate-source voltage limit is higher (±20V vs ±8V), which is technically a safety improvement but represents a spec difference.
Lifecycle StatusObsoleteActiveUnknown
Market AvailabilityDiscontinuedIn stockUnknown
REACHUnknownREACHUnknown
RoHSRoHSRoHSUnknown
DescriptionN-Channel 30 V 5.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6N-Channel 30 V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6The DMN3033LDM-7 is a highly robust, active alternative with a higher current handling of 6.9A and a lower Rds(on) of 33 mOhm. It is fully p
ManufactureronsemiSTMicroelectronicsDiodes Incorporated
TypeTransistorsTransistorsComponent
DatasheetOpenOpenN/A
Lead Time7 days18 weeksUnknown
Country of Origin---
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.21.0095--
Moisture Sensitivity Level---
FET TypeN-Channel--
Vgs (Max)±8V--
TechnologyMOSFET (Metal Oxide)--
Mounting TypeSurface Mount--
Package / CaseSOT-23-6 Thin, TSOT-23-6--
Vgs(th) (Max) @ Id1V @ 250µA--
Operating Temperature-55°C ~ 150°C (TJ)--
Rds On (Max) @ Id, Vgs42mOhm @ 5.2A, 4.5V--

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Frequently asked questions

Yes. The onsemi FDC633N is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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