All Alternatives

Alternatives to onsemi IRF530A

onsemi IRF530A and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

IRF530A compared against its qualified second sources
IRF530AonsemiIRF530NPBFInfineon TechnologiesSTP24NF10STMicroelectronics+3more
FFF CompatibilityStandard TO-220 package with identical pinout (Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Tab: Drain).Matches the physical dimensions and mounting footprint of the original TO-220 package.Meets or exceeds all critical electrical specifications (100V breakdown voltage, 17A current limit, and lower RDS(on)).Standard TO-220 package with identical pinout (Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Tab: Drain).Direct physical match for the original TO-220 package footprint.Significantly upgrades continuous current capability and thermal performance with zero electrical compromises.
AI Summary

IRF530A by onsemi: N-Channel 100 V 14A (Tc) 55W (Tc) Through Hole TO-220-3.

This is an active, modern drop-in replacement by Infineon that meets or exceeds every key specification of the obsolete IRF530A. It provides a higher current limit and lower conduction losses while remaining highly compatible with existing drive circuitry.

  • Pin-compatible drop-in replacement
  • Higher continuous drain current (17A vs 14A)
  • Lower RDS(on) resistance (90 mOhm vs 110 mOhm) for lower conduction losses
  • Slightly higher input capacitance (920 pF vs 790 pF)

This high-performance N-channel MOSFET from STMicroelectronics features an extremely low RDS(on) of 60mOhm and a higher continuous current rating of 26A. It represents a highly reliable and thermally efficient active upgrade for the original device.

  • Significantly lower RDS(on) resistance (60 mOhm vs 110 mOhm) resulting in cooler operation
  • Much higher continuous current capability (26A vs 14A)
  • Higher power dissipation limit (85W vs 55W)
  • Slightly higher gate charge (41 nC vs 36 nC) which may slightly slow switching speeds in weak drive circuits
Lifecycle StatusObsoleteActiveActive
Market AvailabilityNon-stockIn stockIn stock
REACHREACHREACHREACH
RoHSRoHSRoHSRoHS
DescriptionN-Channel 100 V 14A (Tc) 55W (Tc) Through Hole TO-220-3N-Channel 100 V 17A (Tc) 70W (Tc) Through Hole TO-220ABN-Channel 100 V 26A (Tc) 85W (Tc) Through Hole TO-220
ManufactureronsemiInfineon TechnologiesSTMicroelectronics
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time101 weeks26 weeks15 weeks
Country of OriginCN, PH--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity LevelNot Applicable--
FET TypeN-Channel--
Vgs (Max)±20V--
TechnologyMOSFET (Metal Oxide)--
Mounting TypeThrough Hole--
Package / CaseTO-220-3--
Vgs(th) (Max) @ Id4V @ 250µA--
Operating Temperature-55°C ~ 175°C (TJ)--
Rds On (Max) @ Id, Vgs110mOhm @ 7A, 10V--

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Related parts

PartMarket availabilityLifecycleAlternatives available
IRF530STMicroelectronicsDiscontinuedObsolete4Alternatives availableSee Alternatives
IRF5210SPBFInfineon TechnologiesNon-stockObsolete4Alternatives availableSee Alternatives
IRF9310TRPBFInfineon TechnologiesNon-stockObsolete4Alternatives availableSee Alternatives

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Frequently asked questions

Yes. The onsemi IRF530A is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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