All Alternatives

Alternatives to onsemi MMBT3640

onsemi MMBT3640 and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

MMBT3640 compared against its qualified second sources
MMBT3640onsemiMMBT4126LT1GonsemiMMBTH81onsemi+2more
FFF CompatibilitySOT-23-3 package with standard pin layout matching the original MMBT3640 (Pin 1: Base, Pin 2: Emitter, Pin 3: Collector).Standard physical dimensions of SOT-23 (TO-236-3) align directly.Transition frequency is lower at 250 MHz compared to the original 500 MHz, which may affect ultra-high speed switching designs.Housed in a standard SOT-23-3 package utilizing the same pinout style (1-Base, 2-Emitter, 3-Collector).Same footprint and packaging dimensions.Maximum collector current is limited to 50 mA compared to 200 mA on the original MMBT3640.
AI Summary

MMBT3640 by onsemi: Bipolar (BJT) Transistor PNP 12 V 200 mA 500MHz 225 mW Surface Mount SOT-23-3.

This is a direct manufacturer-recommended substitute from onsemi. It perfectly matches the physical footprint, pinout configuration, and 200 mA current capability while offering an improved 25 V breakdown voltage. The transition frequency is 250 MHz, which serves well for most high-speed switching needs though it is lower than the original's 500 MHz.

  • Direct manufacturer-recommended substitute part
  • Meets full 200 mA collector current capacity
  • Higher collector-emitter breakdown voltage (25 V vs 12 V)
  • Lower transition frequency (250 MHz vs 500 MHz)

This active RF transistor is ideal if the original MMBT3640 was being used in its upper frequency boundaries. It boasts an improved 600 MHz transition frequency and a 20 V rating, though its collector current is restricted to 50 mA. This is an excellent alternative for signal processing or low-current RF switching circuits.

  • Higher transition frequency (600 MHz vs 500 MHz) for RF and ultra-high-speed switching
  • Higher breakdown voltage ceiling (20 V vs 12 V)
  • Active lifecycle status and easy to source
  • Lower collector current capacity (50 mA vs 200 mA)
Lifecycle StatusObsoleteActiveActive
Market AvailabilityDiscontinuedIn stockIn stock
REACHREACHREACHREACH
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DescriptionBipolar (BJT) Transistor PNP 12 V 200 mA 500MHz 225 mW Surface Mount SOT-23-3Bipolar (BJT) Transistor PNP 25 V 200 mA 250MHz 225 mW Surface Mount SOT-23-3 (TO-236)RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23-3
Manufactureronsemionsemionsemi
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time39 weeks49 weeks11 weeks
Country of OriginJP--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.21.0075--
Moisture Sensitivity Level1 (Unlimited)--
Power - Max225 mW--
Mounting TypeSurface Mount--
Package / CaseTO-236-3, SC-59, SOT-23-3--
Transistor TypePNP--
Operating Temperature-55°C ~ 150°C (TJ)--
Frequency - Transition500MHz--
Supplier Device PackageSOT-23-3--
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA--

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Frequently asked questions

Yes. The onsemi MMBT3640 is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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