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Alternatives to STMicroelectronics STN3NF06L

STMicroelectronics STN3NF06L and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

STN3NF06L compared against its qualified second sources
STN3NF06LSTMicroelectronicsZXMN6A25GTADiodes IncorporatedDMN6068SE-13Diodes Incorporated+2more
FFF CompatibilityIdentical SOT-223 package footprint with matching pin assignments (Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4/Tab: Drain).Identical SOT-223 surface mount package dimensions and mechanical profile.Meets the 60V breakdown voltage rating and logic-level gate drive threshold requirements, while offering superior RDS(on) and current capabilities.Standard SOT-223 pinout matches the target device pin for pin (Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4/Tab: Drain).Housed in a standard SOT-223 footprint with matching mechanical parameters.Matches the 60V breakdown rating and supports logic-level drive with a threshold voltage compatible with typical low-voltage logic.
AI Summary

STN3NF06L by STMicroelectronics: N-Channel 60 V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223.

This N-channel MOSFET serves as an excellent upgrade alternative, matching the 60V voltage rating and the physical footprint of the original STN3NF06L. It features a lower RDS(on) of 50 mOhm and a higher continuous current rating of 4.8A, resulting in reduced thermal dissipation and enhanced system efficiency. Logic-level compatibility is maintained with a low threshold voltage suitable for direct microcontroller drive.

  • Lower RDS(on) of 50 mOhm vs 100 mOhm for improved efficiency
  • Higher continuous drain current rating of 4.8A vs 4A
  • Identical SOT-223 package footprint and pin assignment
  • Slightly higher input capacitance (1063 pF vs 340 pF) which may slightly slow switching speeds in high-frequency applications

The DMN6068SE-13 is a direct drop-in replacement that meets or exceeds the critical parameters of the STN3NF06L. It provides a robust 60V breakdown voltage rating and a 4.1A drain current capability combined with a lower on-resistance of 68 mOhm. The gate drive characteristics are fully compatible with logic-level control.

  • Lower RDS(on) of 68 mOhm vs 100 mOhm for cooler operation
  • Slightly higher continuous drain current of 4.1A vs 4A
  • Identical package footprint and pin configuration
  • Slightly higher gate-source threshold voltage of 3.0V max vs 2.8V max under specific conditions
  • Larger gate charge (10.3 nC @ 10V) requiring slightly more driver current
Lifecycle StatusActiveUnknownActive
Market AvailabilityIn stockUnknownIn stock
REACHREACHUnknownREACH
RoHSRoHSUnknownRoHS
DescriptionN-Channel 60 V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223This N-channel MOSFET serves as an excellent upgrade alternative, matching the 60V voltage rating and the physical footprint of the originalN-Channel 60 V 4.1A (Ta) 2W (Ta) Surface Mount SOT-223-3
ManufacturerSTMicroelectronicsDiodes IncorporatedDiodes Incorporated
TypeTransistorsComponentTransistors
DatasheetOpenN/AOpen
Lead Time15 weeksUnknown40 weeks
Country of OriginCN, SG, IT--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
FET TypeN-Channel--
Vgs (Max)±16V--
TechnologyMOSFET (Metal Oxide)--
Mounting TypeSurface Mount--
Package / CaseTO-261-4, TO-261AA--
Vgs(th) (Max) @ Id2.8V @ 250µA--
Operating Temperature-55°C ~ 150°C (TJ)--
Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 10V--

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Frequently asked questions

Yes. The STMicroelectronics STN3NF06L is active and in production. The parts listed here are qualified equivalents if you need a second source or better availability.

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