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Alternatives to Diodes Incorporated 1N4007-T

Diodes Incorporated 1N4007-T and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

1N4007-T compared against its qualified second sources
1N4007-TDiodes Incorporated1N4007G-TDiodes Incorporated1N4007RLGonsemi+3more
FFF CompatibilityThe physical physical footprint and 2-pin axial mounting are identical, but pin naming in the database differs (Cathode/Anode vs K/A).The physical dimensions and DO-41 axial THT package outline match the original part exactly.All key electrical ratings (1A current, 1000V voltage, 1.0V forward drop) meet or exceed the original's baseline.Axial 2-pin physical mounting is identical, but pin naming conventions differ slightly in the datasheet.Standard DO-41 physical dimensions and THT package style match the original device.The forward voltage is slightly higher (1.1 V vs 1.0 V) and maximum reverse leakage is higher (10 µA vs 5 µA) compared to the original.
AI Summary

1N4007-T by Diodes Incorporated: Diode 1000 V 1A Through Hole DO-41.

This is the manufacturer-recommended upgrade with a glass-passivated junction, offering superior reliability and higher operating temperature limits while maintaining identical key electrical and mechanical specifications. It serves as a direct drop-in replacement on the board.

  • Direct manufacturer-recommended upgrade featuring glass-passivated junction (G suffix)
  • Identical 1000V maximum reverse voltage and 1A average forward current ratings
  • Higher junction operating temperature limit of 175°C compared to original 150°C limit

A reliable second-source standard rectifier from onsemi in the identical DO-41 axial package. It handles the same 1000V and 1A limits, though with slightly higher forward drop and reverse leakage typical of standard 1N4007 parts.

  • Active second-source part from a premier semiconductor manufacturer (onsemi)
  • Higher maximum operating junction temperature of 175°C vs the original 150°C limit
  • Identical 1000V blocking voltage and 1A average rectified forward current ratings
  • Slightly higher forward voltage drop of 1.1 V at 1 A compared to 1.0 V on the original
  • Higher maximum reverse leakage current of 10 µA at 1000 V compared to 5 µA on the original
Lifecycle StatusObsoleteActiveActive
Market AvailabilityIn stockIn stockIn stock
REACHREACHREACHREACH
RoHSRoHSRoHSRoHS
DescriptionDiode 1000 V 1A Through Hole DO-41Diode 1000 V 1A Through Hole DO-41Diode 1000 V 1A Through Hole Axial
ManufacturerDiodes IncorporatedDiodes Incorporatedonsemi
TypeDiodesDiodesDiodes
DatasheetOpenOpenOpen
Lead Time14 weeks12 weeks13 weeks
Country of OriginCN--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.10.0080--
Moisture Sensitivity Level1 (Unlimited)--
SpeedStandard Recovery--
TechnologyDiffused Junction--
Mounting TypeThrough Hole--
Package / CaseDO-41--
Capacitance @ Vr, F8.0pF--
Supplier Device PackageDO-41--
Current - Reverse Leakage @ Vr5.0µA--
Voltage - DC Reverse (Vr) (Max)1000.0V--

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Frequently asked questions

Yes. The Diodes Incorporated 1N4007-T is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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