Alternatives to Diodes Incorporated 1N4007G
Diodes Incorporated 1N4007G and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.
1N4007GDiodes Incorporated | 1N4007GTaiwan Semiconductor Corporation | 1N4007Gonsemi | +7more | |
|---|---|---|---|---|
| FFF Compatibility | Standard DO-41 (DO-204AL) axial-lead package with identical 2-pin polarity and spacing.Identical physical dimensions and standard through-hole axial mounting style.Matches or exceeds all key electrical characteristics, including 1000 V Vr, 1.0 A current, and 1.0 V Vf. | Standard DO-41 axial-lead package with identical Cathode/Anode configuration.Matches standard physical packaging size and through-hole mounting.Maximum forward voltage is slightly higher at 1.1 V @ 1.0 A compared to the target part's 1.0 V @ 1.0 A. | ||
1N4007G by Diodes Incorporated: Diode 1000 V 1A Through Hole DO-41. | This is an exact drop-in equivalent with matching electrical ratings and identical low forward voltage drop. It is highly active and widely stocked.
| A direct industry-standard second source from a highly reliable manufacturer, offering a higher thermal limit of 175°C. It has a slightly higher forward voltage drop of 1.1 V.
| ||
| Lifecycle Status | Active | Active | Active | |
| Market Availability | In stock | In stock | In stock | |
| REACH | REACH | REACH | REACH | |
| RoHS | RoHS | RoHS | RoHS | |
| Description | Diode 1000 V 1A Through Hole DO-41 | Diode 1000 V 1A Through Hole DO-204AL (DO-41) | Diode 1000 V 1A Through Hole DO-204AL (DO-41) | |
| Manufacturer | Diodes Incorporated | Taiwan Semiconductor Corporation | onsemi | |
| Type | Diodes | Diodes | Diodes | |
| Datasheet | Open | Open | Open | |
| Lead Time | 12 weeks | 8 weeks | 8 weeks | |
| Country of Origin | CN | - | - | |
| Export Control Class Number | EAR99 | EAR99 | EAR99 | |
| HTSUS Code | 8541.10.0080 | - | - | |
| Moisture Sensitivity Level | 1 (Unlimited) | - | - | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | - | - | |
| Technology | Glass Passivated | - | - | |
| Mounting Type | Through Hole | - | - | |
| Package / Case | DO-41 Plastic | - | - | |
| Capacitance @ Vr, F | 8.0pF | - | - | |
| Supplier Device Package | DO-41 Plastic | - | - | |
| Current - Reverse Leakage @ Vr | 5.0µA | - | - | |
| Voltage - DC Reverse (Vr) (Max) | 1000.0V | - | - |
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Related parts
| Part | Market availability | Lifecycle | Alternatives available |
|---|---|---|---|
| In stock | Obsolete | 5Alternatives availableSee Alternatives | |
| In stock | Obsolete | 5Alternatives availableSee Alternatives | |
| Discontinued | Obsolete | 5Alternatives availableSee Alternatives | |
| In stock | Obsolete | 4Alternatives availableSee Alternatives |
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Frequently asked questions
Yes. The Diodes Incorporated 1N4007G is active and in production. The parts listed here are qualified equivalents if you need a second source or better availability.
The closest qualified second sources for the Diodes Incorporated 1N4007G are the 1N4007G (Taiwan Semiconductor Corporation) and the 1N4007G (onsemi), out of 9 matched alternatives in total. Each is compared against the original on fit, form and function in the table above.
Not always. The alternatives to the 1N4007G are matched on function but can differ in package, pinout or a key parameter, so review the fit/form/function notes in the table and the datasheet before designing one in.
The 1N4007G (Diodes Incorporated) is a part in the Diodes category. This page lists qualified, cross-referenced replacements for it with a side-by-side comparison.
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