All Alternatives

Alternatives to Texas Instruments CSD17313Q2

Texas Instruments CSD17313Q2 and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for Texas Instruments CSD17313Q2

CSD17313Q2 compared against its qualified second sources
CSD17313Q2Texas InstrumentsCSD17571Q2Texas InstrumentsCSD17318Q2Texas Instruments+1more
FFF CompatibilityShares the exact same Q2 (SON 2x2) package pin assignments and pad positions.Identical 2-mm x 2-mm plastic SON dimensions.Provides equivalent 30-V voltage rating and close RDS(on) of 24 mΩ at 10 V and 29 mΩ at 4.5 V.Matches the exact same Q2 (SON 2x2) footprint and pin assignment verified by datasheet extraction.Housed in the identical 2-mm x 2-mm SON plastic package.Shares the same 30-V breakdown rating while offering superior current handling and on-resistance.
AI Summary

CSD17313Q2 by Texas Instruments: N-Channel 30 V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2).

This NexFET alternative is an excellent close match for the target part, maintaining very similar gate charge characteristics while extending overall current handling margins. It is designed for low-loss power conversion and load management applications.

  • Direct drop-in replacement from the same manufacturer and family
  • Comparable gate charge (2.4 nC typical @ 4.5 V) preserving gate drive circuit dynamics
  • Higher continuous drain current handling capability (22A package limit vs 5A)

This is a higher-performance drop-in sibling from TI's NexFET series that provides identical physical compatibility with improved electrical characteristics. It significantly reduces on-state conduction losses and increases current limits.

  • Pin-compatible drop-in replacement from the same NexFET family
  • Significantly lower on-resistance (15.1 mΩ max vs 30 mΩ max) for reduced conduction losses
  • Higher continuous drain current capacity (25A vs 5A) providing a wider safety margin
  • Higher total gate charge (6 nC vs 2.7 nC max) which may slightly increase switching losses in high-frequency designs
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