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Alternatives to Texas Instruments CSD19531Q5A

Texas Instruments CSD19531Q5A and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

CSD19531Q5A compared against its qualified second sources
CSD19531Q5ATexas InstrumentsNTMFS10N7D2ConsemiDI100N10PQDiotec Semiconductor+1more
FFF CompatibilityIdentical 8-pin DFN/QFN package pinout with pins 1-3 as Source, pin 4 as Gate, and pins 5-8/exposed pad as Drain.Housed in a standard 5mm x 6mm Power 56 (PQFN8) package that matches the physical footprint dimensions of the original 8-VSONP.Features slightly lower continuous drain current rating (78A vs 100A) and slightly higher Rds(on) max (7.2 mOhm vs 6.4 mOhm).Matches the exact standard pinout layout: pins 1-3 Source, pin 4 Gate, pins 5-8 Drain, and center pad Drain.Standard QFN 5mm x 6mm package is physically interchangeable with the original VSONP 5x6 package.Meets or exceeds all safety-critical parameters including 100V breakdown, 100A continuous current, and lower on-resistance.
AI Summary

CSD19531Q5A by Texas Instruments: N-Channel 100 V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6).

An excellent general-purpose alternative from onsemi's PowerTrench line that offers identical physical dimensions and pin layouts. While it carries a slightly higher maximum on-resistance and a slightly lower continuous current rating, it compensates with significantly lower gate charge and input capacitance for improved high-speed switching efficiency. This makes it highly compatible for synchronous rectification or motor control applications.

  • Direct footprint and pinout drop-in replacement
  • Lower gate charge (37 nC vs 48 nC) reduces switching losses
  • Lower input capacitance (2635 pF vs 3870 pF) allows faster gate driving
  • Slightly higher Rds(on) max (7.2 mOhm vs 6.4 mOhm) increases conduction losses
  • Slightly lower continuous drain current capability (78A vs 100A)

A highly robust alternative that matches the 100A current capacity of the original while offering a lower on-resistance of 5.0 mOhm. It features an outstanding power dissipation capability of 250W and operates in temperatures up to 175°C. This makes it an exceptionally safe and high-performance choice for thermally demanding designs.

  • Same 100A continuous drain current rating as the original
  • Lower Rds(on) max (5.0 mOhm vs 6.4 mOhm) reduces conduction losses
  • Significantly higher power dissipation capability (250W vs 125W) due to excellent thermal design
  • Higher gate charge (64 nC vs 48 nC) which may slightly increase gate driver power requirements
Lifecycle StatusActiveActiveActive
Market AvailabilityIn stockIn stockIn stock
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DescriptionN-Channel 100 V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)N-Channel 100 V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6), Power56N-Channel 100 V 100A (Tc) 250W (Tc) Surface Mount 8-QFN (5x6)
ManufacturerTexas InstrumentsonsemiDiotec Semiconductor
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time16 weeks52 weeks12 weeks
Country of Origin---
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
FET TypeN-Channel--
Vgs (Max)±20V--
TechnologyMOSFET (Metal Oxide)--
Mounting TypeSurface Mount--
Package / Case8-PowerTDFN--
Vgs(th) (Max) @ Id3.3V @ 250µA--
Operating Temperature-55°C ~ 150°C (TJ)--
Rds On (Max) @ Id, Vgs6.4mOhm @ 16A, 10V--

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Frequently asked questions

Yes. The Texas Instruments CSD19531Q5A is active and in production. The parts listed here are qualified equivalents if you need a second source or better availability.

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