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Alternatives to Infineon Technologies IRF6674TR1PBF

Infineon Technologies IRF6674TR1PBF and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

IRF6674TR1PBF compared against its qualified second sources
IRF6674TR1PBFInfineon TechnologiesBSC100N06LS3GATMA1Infineon TechnologiesNTMFS5H610NLT1Gonsemi+1more
FFF CompatibilityThe 8-pin PG-TDSON-8 footprint is mechanically and electrically incompatible with the proprietary 3-terminal DirectFET MZ landing pattern.The plastic-molded PG-TDSON-8 package has completely different physical dimensions and mounting profile compared to the metal-can DirectFET MZ.Provides an excellent electrical match with a 60V N-channel rating, similar thermal ratings, and a slightly lower RDS(on) (10 mOhm vs 11 mOhm).The DFN5 package has an 8-pad layout that is incompatible with the proprietary 3-terminal DirectFET MZ landing pattern.The DFN5 has a plastic molded body with a flat underside, contrasting with the metal canister structure of the DirectFET MZ.Exceeds the original specifications in switching efficiency and gate charge while perfectly matching the 60V breakdown voltage and offering 10 mOhm RDS(on).
AI Summary

IRF6674TR1PBF by Infineon Technologies: N-Channel 60 V 13.4A (Ta), 67A (Tc) 3.6W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ.

The BSC100N06LS3GATMA1 is an active, modern N-Channel 60V MOSFET from Infineon in a standard PG-TDSON-8 package. It offers a slightly improved RDS(on) of 10 mOhm (vs 11 mOhm) and similar current capabilities. While a PCB redesign is required due to the discontinuation of the DirectFET family, this part serves as a highly reliable and long-term functional replacement.

  • Very low RDS(on) of 10 mOhm max compared to 11 mOhm of the original
  • Industry-standard PG-TDSON-8-5 (5x6mm) footprint ensures excellent thermal performance and easy second-sourcing
  • Wide operating temperature range extending down to -55°C
  • Requires board layout redesign to accommodate the PG-TDSON-8-5 footprint instead of DirectFET MZ
  • Slightly higher gate charge (45 nC vs 36 nC max) which may slightly increase gate driver requirements

The NTMFS5H610NLT1G from onsemi is an active N-channel 60V MOSFET housed in a standard DFN5 package. It boasts a much lower gate charge (13.7 nC vs 36 nC) and lower input capacitance, leading to superior high-frequency switching efficiency. It requires a board layout modification but offers outstanding electrical performance as a modern alternative.

  • Significantly lower gate charge (13.7 nC vs 36 nC max) which reduces switching losses and gate driver load
  • Very low input capacitance (880 pF vs 1350 pF) allowing for faster switching transition speeds
  • Improved RDS(on) max of 10 mOhm compared to 11 mOhm of the original
  • Requires board layout redesign to accommodate the DFN5 footprint
  • Slightly lower continuous drain current rating (44A vs 67A Tc)
Lifecycle StatusObsoleteActiveUnknown
Market AvailabilityNon-stockIn stockUnknown
REACHREACHREACHUnknown
RoHSRoHSRoHSUnknown
DescriptionN-Channel 60 V 13.4A (Ta), 67A (Tc) 3.6W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZN-Channel 60 V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5The NTMFS5H610NLT1G from onsemi is an active N-channel 60V MOSFET housed in a standard DFN5 package. It boasts a much lower gate charge (13.
ManufacturerInfineon TechnologiesInfineon Technologiesonsemi
TypeTransistorsTransistorsComponent
DatasheetOpenOpenN/A
Lead Time12 weeks52 weeksUnknown
Country of OriginUS--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
GradeConsumer--
FET TypeN-Channel--
Vgs (Max)±20V--
TechnologyHEXFET® Silicon technology--
FET FeatureDual Sided Cooling--
Mounting TypeSurface Mount--
QualificationConsumer--
Package / CaseDirectFET™ MZ--

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Frequently asked questions

Yes. The Infineon Technologies IRF6674TR1PBF is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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