All Alternatives

Alternatives to Infineon Technologies IRFS4610PBF

Infineon Technologies IRFS4610PBF and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for Infineon Technologies IRFS4610PBF

IRFS4610PBF compared against its qualified second sources
IRFS4610PBFInfineon TechnologiesFDB047N10onsemiFDB035N10Aonsemi
FFF CompatibilityUtilizes the exact same D2PAK package and pin configuration with Gate on Pin 1, Source on Pin 3, and Drain connected to the exposed pad.Physical case dimensions and mounting style are identical to the original component.Provides a matching N-channel 100V rating with significantly enhanced safety margins for current and thermal performance.Identical TO-263AB/D2PAK package and pinout configuration with Gate on Pin 1, truncated Drain on Pin 2 (connected to tab), and Source on Pin 3.Standard surface-mount D2PAK package dimensions match the original footprint exactly.N-channel, 100V breakdown voltage matches the original, while conduction resistance, current, and power dissipation performance ratings meet or exceed the original target specs.
AI Summary

IRFS4610PBF by Infineon Technologies: N-Channel 100 V 73A (Tc) 190W (Tc) Surface Mount D2PAK.

An alternative from onsemi that balances extremely low on-resistance with excellent thermal performance, serving as a highly reliable active replacement.

  • Much lower maximum on-resistance of 4.7 mOhm compared to 14 mOhm.
  • Higher continuous drain current handling of 120 A compared to 73 A.
  • Higher peak power dissipation of 375 W compared to 190 W.
  • Higher gate charge of 210 nC compared to 90 nC, which may affect switching speed if the gate-driver circuit is not sized appropriately.

This active part from onsemi is an excellent upgrade option that offers drastically reduced conduction losses and superior power handling. It is a direct drop-in package equivalent.

  • Significantly lower on-resistance of 3.5 mOhm max compared to 14 mOhm max, greatly reducing conduction losses.
  • Higher continuous drain current rating of 120 A compared to 73 A.
  • Higher maximum power dissipation capability of 333 W compared to 190 W.
  • Slightly higher typical gate charge of 116 nC compared to 90 nC, which may marginally increase switching times in gate-drive limited designs.
Lifecycle StatusObsoleteActiveActive
Market AvailabilityDiscontinuedIn stockIn stock
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