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Alternatives to Infineon Technologies IRF7821PBF

Infineon Technologies IRF7821PBF and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

IRF7821PBF compared against its qualified second sources
IRF7821PBFInfineon TechnologiesSI4162DY-T1-GE3Vishay SiliconixDMN3010LSS-13Diodes Incorporated+2more
FFF CompatibilityStandard SO-8 package with identical pin assignments (Pins 1-3: Source, Pin 4: Gate, Pins 5-8: Drain).Same surface-mount SO-8 / SOIC-8 package footprint and dimensions.Meets the 30V Vdss, +/-20V Vgs, and 13.6A continuous current ratings while delivering slightly lower on-resistance.Standard SO-8 package with identical pin assignments (Pins 1-3: Source, Pin 4: Gate, Pins 5-8: Drain).Same standard SOIC-8 surface mount package layout.Vdss of 30V matches, with a higher continuous current rating and equivalent gate drive characteristics.
AI Summary

IRF7821PBF by Infineon Technologies: N-Channel 30 V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO.

The SI4162DY-T1-GE3 from Vishay is an active, high-performance drop-in replacement that matches the original part's key voltage and continuous current ratings. It features a lower maximum on-resistance of 7.9 mOhm, which will reduce conduction losses. This makes it an ideal second-source alternative for obsolete IRF7821PBF designs.

  • Fully active and highly available life cycle status
  • Superior on-resistance of 7.9 mOhm (max) compared to 9.1 mOhm on the original part
  • Matches the exact continuous drain current of 13.6 A under ambient conditions
  • Slightly higher typical gate charge (Qg) of 19.5 nC at 10V vs the original's fast gate charge profile.

The DMN3010LSS-13 is an active and robust N-channel alternative offering an elevated current ceiling of 16 A and a slightly improved maximum on-resistance of 9 mOhm. It is highly suited for power management circuits requiring a direct, active-lifecycle replacement.

  • Fully active and highly available second-source option
  • Higher continuous drain current rating of 16 A compared to 13.6 A on the original part
  • Slightly better on-resistance of 9.0 mOhm (max) at 10V compared to 9.1 mOhm
  • Higher input capacitance (Ciss) of 2096 pF versus 1010 pF, which may slightly slow down switching speed in high-frequency applications.
Lifecycle StatusObsoleteActiveActive
Market AvailabilityDiscontinuedIn stockIn stock
REACHREACHREACHREACH
RoHSRoHSRoHSRoHS
DescriptionN-Channel 30 V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SON-Channel 30 V 19.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOICN-Channel 30 V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOP
ManufacturerInfineon TechnologiesVishay SiliconixDiodes Incorporated
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time52 weeks55 weeks40 weeks
Country of OriginCN, PH, TH--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
FET TypeN-Channel--
Vgs (Max)±20V--
TechnologyMOSFET (Metal Oxide)--
Mounting TypeSurface Mount--
Package / Case8-SOIC (0.154", 3.90mm Width)--
Vgs(th) (Max) @ Id1V @ 250µA--
Operating Temperature-55°C ~ 155°C (TJ)--
Rds On (Max) @ Id, Vgs9.1mOhm @ 13A, 10V--

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Frequently asked questions

Yes. The Infineon Technologies IRF7821PBF is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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