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Alternatives to Infineon Technologies IRG4PH50UDPBF

Infineon Technologies IRG4PH50UDPBF and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

IRG4PH50UDPBF compared against its qualified second sources
IRG4PH50UDPBFInfineon TechnologiesIKW40N120H3FKSA1Infineon TechnologiesIKW25N120H3FKSA1Infineon Technologies+2more
FFF CompatibilityIdentical pin assignment (Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter) and package footprint as the original TO-247AC.Standard TO-247-3 package (PG-TO247-3-1) with compatible physical dimensions and mounting style.Meets or exceeds all major electrical ratings including 1200V breakdown voltage, higher current carrying capacity, and lower on-state losses.Matches the original pin layout (1: G, 2: C, 3: E) and mounting dimensions.Packaged in the same physical TO-247-3 housing.Meets the 1200V breakdown voltage rating and provides equivalent to superior current and power handling.
AI Summary

IRG4PH50UDPBF by Infineon Technologies: IGBT 1200 V 45 A 200 W Through Hole TO-247AC.

This modern TRENCHSTOP HighSpeed 3 IGBT from the same manufacturer is an excellent upgrade, providing much higher current capability, significantly lower conduction losses, and improved thermal performance in an active lifecycle state.

  • Higher current rating: 80 A continuous at 25°C vs 45 A for the original part.
  • Significantly lower collector-emitter saturation voltage (max 2.4V vs 3.7V), reducing conduction losses.
  • Much higher maximum power dissipation (483 W vs 200 W) and higher maximum junction temperature (175°C vs 150°C).
  • Minimum operating temperature is -40°C compared to -55°C for the original part.

An outstanding drop-in replacement from the original manufacturer that offers modernized Trench Field Stop technology to replace the obsolete planar IGBT, resulting in cooler operation and improved overall efficiency.

  • Closest direct-scaling alternative in terms of continuous current capacity (50 A vs 45 A).
  • Lower saturation voltage (max 2.4V @ 25A vs 3.7V @ 24A) for reduced power dissipation.
  • Improved power dissipation (326 W vs 200 W) and higher maximum junction temperature (175°C vs 150°C).
  • Minimum operating temperature is -40°C compared to -55°C for the original part.
Lifecycle StatusObsoleteActiveActive
Market AvailabilityDiscontinuedIn stockIn stock
REACHREACHREACHREACH
RoHSRoHSRoHSRoHS
DescriptionIGBT 1200 V 45 A 200 W Through Hole TO-247ACIGBT Trench Field Stop 1200 V 80 A 483 W Through Hole PG-TO247-3-1IGBT Trench Field Stop 1200 V 50 A 326 W Through Hole PG-TO247-3-1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon Technologies
TypeTransistorsTransistorsTransistors
DatasheetOpenOpenOpen
Lead Time16 weeks19 weeks36 weeks
Country of Origin---
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
Input TypeStandard--
Gate Charge160 nC--
Power - Max200 W--
Mounting TypeThrough Hole--
Package / CaseTO-247-3--
Test Condition800V, 24A, 5Ohm, 15V--
Switching Energy2.1mJ (on), 1.5mJ (off)--
Td (on/off) @ 25°C47ns/110ns--

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Frequently asked questions

Yes. The Infineon Technologies IRG4PH50UDPBF is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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