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Alternatives to Infineon Technologies IRG4PH50UDPBF

Infineon Technologies IRG4PH50UDPBF and its qualified second sources, compared on form, fit and function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

Equivalent and substitute parts for Infineon Technologies IRG4PH50UDPBF

IRG4PH50UDPBF compared against its qualified second sources
IRG4PH50UDPBFInfineon TechnologiesSTGW25H120F2STMicroelectronicsSTGWA40H120DF2STMicroelectronics
FFF CompatibilitySame standard TO-247 package with the exact G-C-E pinout assignments.Standard TO-247-3 outline matching the physical envelope of the original IRG4PH50UDPbF.Meets the 1200 V breakdown rating and surpasses the target device in current, thermal, and conduction efficiency limits.Identical G-C-E pin layout on pins 1, 2, and 3.Uses the TO-247 long lead package variant (STGWA series), which features longer pins that may need trimming during assembly compared to standard TO-247 leads.Fully compatible 1200 V breakdown voltage and vastly superior continuous and pulsed current capabilities.
AI Summary

IRG4PH50UDPBF by Infineon Technologies: IGBT 1200 V 45 A 200 W Through Hole TO-247AC.

The STGW25H120F2 is an active 1200 V second-source option from STMicroelectronics. It offers excellent modern efficiency, a lower saturation voltage, and a robust thermal envelope within a fully compatible physical footprint.

  • Direct pin-compatible match in standard TO-247-3 package
  • Active lifecycle status from a top-tier manufacturer (STMicroelectronics)
  • Higher continuous collector current (50 A vs 45 A) and power dissipation (375 W vs 200 W)
  • Higher total gate charge (Qg of 100 nC vs 160 nC typical, though maximum is comparable)
  • Longer reverse recovery time for the built-in diode compared to the original HEXFRED diode

The STGWA40H120DF2 is a high-performance, higher-current alternative that provides an extra safety ceiling for power-intensive applications. It retains the identical G-C-E pin assignments while scaling up the system's thermal and continuous current limits.

  • Provides a robust current safety margin: 80 A vs 45 A continuous collector current
  • Significantly higher power dissipation ceiling (468 W vs 200 W)
  • Lower typical collector-emitter saturation voltage (VCE(on)): 2.1 V @ 40 A vs 2.78 V @ 24 A
  • Long leads package variant requires leads to be cut or formed to match the mechanical height of standard TO-247 leads
  • Higher gate charge (Qg of 158 nC typical) may require slightly more gate drive current
Lifecycle StatusObsoleteActiveActive
Market AvailabilityDiscontinuedIn stockIn stock
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