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Alternatives to STMicroelectronics BUT30V

STMicroelectronics BUT30V and its qualified second sources, compared on form/fit/function, stock, lifecycle and price — the same checks Parter runs inside a BOM.

BUT30V compared against its qualified second sources
BUT30VSTMicroelectronicsBUT232VSTMicroelectronicsIXFN180N15PIXYS+1more
FFF CompatibilityShares the identical ISOTOP (SOT-227) physical footprint, but Pin 4 is internally tied to Emitter, whereas on the original BUT30V Pin 4 was Not Connected (NC).Identical ISOTOP (SOT-227) package dimensions and chassis screw-mounting style.NPN power transistor module with superior electrical ratings in voltage, current, and power dissipation.Physically mounts on the same footprint. Pin 1 (Emitter) maps to Source, Pin 2 (Base) maps to Gate, Pin 3 (Collector) maps to Drain, and Pin 4 (NC) becomes a redundant Source connection.Housed in the identical SOT-227 / miniBLOC package with equivalent mechanical dimensions.This is an N-Channel MOSFET rather than an NPN BJT. Being voltage-controlled (Gate) instead of current-controlled (Base), the base drive circuitry on the board must be redesigned.
AI Summary

BUT30V by STMicroelectronics: Bipolar (BJT) Transistor NPN 125 V 100 A 250 W Chassis Mount ISOTOP.

An obsolete but direct BJT sibling from STMicroelectronics that serves as the closest electrical drop-in. It maintains the NPN bipolar junction transistor structure and drive scheme, though it is also discontinued.

  • Direct NPN BJT sibling from the same manufacturer and family
  • Higher voltage capability (300V vs 125V)
  • Higher continuous collector current capability (140A vs 100A)
  • This part is also obsolete and may only be available through surplus or legacy stock channels.
  • Pin 4 is tied to Emitter, requiring layout verification if Pin 4 on the PCB is not left floating.

An active and modern N-channel Power MOSFET replacement that matches the mechanical SOT-227 layout. It provides a massive performance upgrade in current and thermal handling, but requires drive-circuit adaptation to convert from current-drive to voltage-drive.

  • Active and widely available modern replacement from Littelfuse/IXYS
  • Excellent pin alignment mapping directly to Emitter (S), Base (G), and Collector (D) locations
  • Vastly superior power dissipation rating (650W vs 250W)
  • Requires drive circuit redesign because it is a voltage-controlled MOSFET rather than a current-controlled BJT.
  • Pin 4 becomes connected to the Source (Emitter), which requires ensuring Pin 4 is isolated on the existing PCB layout.
Lifecycle StatusObsoleteUnknownUnknown
Market AvailabilityNon-stockUnknownUnknown
REACHREACHUnknownUnknown
RoHSRoHSUnknownUnknown
DescriptionBipolar (BJT) Transistor NPN 125 V 100 A 250 W Chassis Mount ISOTOPAn obsolete but direct BJT sibling from STMicroelectronics that serves as the closest electrical drop-in. It maintains the NPN bipolar junctAn active and modern N-channel Power MOSFET replacement that matches the mechanical SOT-227 layout. It provides a massive performance upgrad
ManufacturerSTMicroelectronicsSTMicroelectronicsIXYS
TypeTransistorsComponentComponent
DatasheetOpenN/AN/A
Lead Time99 weeksUnknownUnknown
Country of OriginMA--
Export Control Class NumberEAR99EAR99EAR99
HTSUS Code8541.29.0055--
Moisture Sensitivity Level1 (Unlimited)--
Power - Max250 W--
Mounting TypeChassis Mount--
Package / CaseISOTOP--
Transistor TypeNPN--
Operating Temperature150°C (TJ)--
Supplier Device PackageISOTOP--
Vce Saturation (Max) @ Ib, Ic900mV @ 10A, 100A--
Current - Collector (Ic) (Max)100 A--

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Frequently asked questions

Yes. The STMicroelectronics BUT30V is marked obsolete, so the manufacturer has discontinued it and any remaining supply is limited to distributor stock. The qualified second sources on this page are active parts you can design in today.

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